ELECTRONIC STRUCTURES AND TRANSPORT PROPERTIES OF SINGLE CRYSTALLINE GaN NANOTUBES

Abstract

The electronic structures and transport properties of single crystalline GaN nanotubes with 0.92 nm inner diameter and different wall thicknesses of 0.08 nm, 0.26 nm and 0.54 nm are studied based on the generalized gradient approximation (GGA) of density functional theory (DFT) and the nonequilibrium green's function (NEGF). The research shows that (1) the three single crystalline GaN nanotubes have direct band gaps, decreasing with the increase of wall thickness; (2) the electronic density of state and electronic transmission spectra of two-probe system have their own pulse-type sharp peaks with almost the same location of electron energy; (3) under different bias-voltages, two-probe systems of the single crystalline GaN nanotubes have the I–V properties which reveal that the single-wall GaN nanotube and the single-layer GaN nanotube are semiconducting and the double-layer GaN nanotube appears nearly metallic.