Abstract
The electronic structures and optical gain of GaAs1−xNx nanowires are calculated via the band anticrossing model together with the eight-band k · p theory. We find that the optical gain spectra show an obvious red shift, and the gain increases slightly with increasing nitrogen content. The transverse magnetic (TM) gain is approximately 8.5 times larger than the transverse electric (TE) gain when the radius R is 3 nm, which indicates that GaAs1−xNx nanowires can be used as TM linearly polarized lasers in the near-infrared range. However, when R is 6 nm, the TM gain approaches the corresponding TE gain. In this case, GaAs1−xNx nanowires are not suitable for linearly polarized lasers.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
