Abstract

The electronic structures of low-doped epitaxial La0.9Hf0.1MnO3 (LHMO) thin films are investigated by x-ray photoemission spectroscopy (XPS) for the first time. XPS spectra of core levels (La 3d, Hf 4f, O 1s, Mn 2p, and Mn 3s) are taken from the cleaned LHMO film surface. Hf 4f spectrum exhibits a typical binding energy (BE=2 eV) of Hf4+. The splitting energy of La 3d core-lever spectrum agrees with the previous reports of other doped LaMnO3 and suggests a trivalent state in the LHMO film. The calculated result of LHMO nominal composition, the shape of Mn 2p spectrum, the separated BE (111.1 eV) between O 1s and Mn 2p2/3 peaks and the splitting energy (6.0 eV) of Mn 3s all reveal that the LHMO compound is in a mixed valence state of Mn2+ and Mn3+, implying an electron-doped conduction mechanism. The magnetic-field dependence of Hall resistivity further confirmed that the carriers in LHMO are electrons.

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