Electronic structure ofInyGa1−yAs1−xNx∕GaAs(N)quantum dots by ten-bandk∙ptheory

Abstract

We present a theoretical study of the electronic and optical properties of InGaAsN∕GaAs quantum dot structures. The calculations are based on a 10×10 k∙p band anticrossing Hamiltonian, incorporating valence, conduction, and nitrogen-induced bands. Numerical results for the model system of a capped pyramid-shaped quantum dot with {101} facets on a thin wetting layer are presented. Theoretical results show lowering of the fundamental optical transition on introduction of nitrogen. With appropriate tailoring of the indium and nitrogen concentration this system could be a potential candidate for 1.55 μm emission on a GaAs substrate.