Abstract
The results of high-pressure low-temperature optical measurements in a diamond-anvil cell of bulk gallium nitride crystals implanted with ytterbium are reported in combination with crystal field calculations of the Yb3+ energy levels. Crystal field analysis of splitting of the 2F7/2 and 2F5/2 states has been performed, with the aim of assigning all features of the experimental luminescence spectra. A thorough analysis of the pressure behavior of the Yb3+ luminescence lines in GaN allowed the determination of the ambient-pressure positions and pressure dependence of the Yb3+ energy levels in the trigonal crystal field as well as the pressure-induced changes of the spin–orbit coupling coefficient.
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