Abstract
AbstractWe have investigated the chemical states and the band gap of ultrathin Si oxynitrides on Si(100) by X‐ray photoemission spectroscopy (XPS) and reflection electron energy loss spectroscopy (REELS). Silicon oxynitride thin films were grown by plasma‐nitridation and annealed‐nitridation treatment. XPS results show that for the annealed‐nitride SiON thin films, Si3N and N(SiOx)3 states exist at the interface, while for the plasma‐nitride SiON thin films, Si3N, N(SiOx)3 and SiNO states exist at the surface with trapped N2 molecules. The band gap for the annealed‐nitride SiON thin film is 8.9 eV at the surface but it is reduced to about 8.45 eV at the interface. Meanwhile, the band gap for the plasma‐nitride SiON thin film is 7.4 eV. In addition, REELS turns out to be an excellent method to obtain the band gap and electronic structure in oxide thin films. Copyright © 2006 John Wiley & Sons, Ltd.
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