Abstract
The electronic structure of ultrathin Cs/Bi2Se3 interfaces has been studied by photoelectron spectroscopy using synchrotron radiation. The experiments were carried out in situ in ultrahigh vacuum with submonolayer Cs coverages on Bi2Se3 samples. It was found that the adsorption of Cs causes changes in the core level spectra of Bi 4f, Bi 5d, Se 3d. It has been established that Cs atoms are adsorbed predominantly on Bi atoms in the upper surface layer. The states of the valence band were studied for a clean Bi2Se3 surface and for the Cs/Bi2Se3 interface. Near the Fermi level, 2D topological states have been found. Two induced surface states appear in the region of the valence band upon adsorption of Cs. Keywords: topological insulators, electronic structure, ultrathin interfaces, photoelectron spectroscopy.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
