Abstract
Angle-resolved photoemission spectroscopy (ARPES) utilizing synchrotron radiation has been used to study the electronic structure of a TiO-like layer formed on a TiC(100) surface. When the TiC(100) surface exposed to 500L of O2 is heated at 1000°C, a TiO-like layer with the thickness of 1.3–2.0Å is formed on the surface. ARPES measurements show that the Ti 3d band and O 2p band are formed in the TiO-like layer at around the Fermi level and at 6–7eV, respectively. Both bands show clear dispersions along both 〈100〉 (Γ¯M¯) and 〈011〉 (Γ¯X¯) symmetry directions of TiC(100), and the dispersive features are compatible with a (1×1) periodicity of TiC(100). These results are compatible with the model that the oxide layer is a well ordered TiO(100) film which is epitaxially grown on the TiC(100) surface.
Published Version
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