Electronic Structure of the GeZnSe, GeGaAs, and GeAlAs(110) Interfaces and Superlattices

Abstract

AbstractThe semi‐empirical tight binding method with sp3 s* basis is used for the electronic structure of GeZnSe, GeGaAs, and GeAlAs (110) superlattices. As the work of Vogl et al. shows, the inclusion of an excited s state s* in the basis set describes the lower part of the conduction band very well. Interface band structure, layer density of states, and charge transfer at the interfaces are given. Various interface states are differentiated between bound interface states and resonance states.