Abstract
The envelope-function approximation is used to describe the electronic structure of superlattices and quantum wells under stress. The strain effects on the electronic properties of GaAs-${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$As quantum wells due to external in-plane stress are analyzed and compared with recent Raman and photoluminescence excitation experiments. The modification of the band structure of an InAs-GaSb superlattice due to lattice mismatch is also analyzed by means of a self-consistent calculation.
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