Electronic structure of single ultrasmall electron devices and device arrays

Abstract

Several questions must be addressed to develop the theory of the electronic structure of single ultrasmall (submicrometer) electron devices and the band structures of device arrays. The effects of intradevice Coulomb interactions and correlations on the electronic structure of individual devices have been studied by use of the multi-electron effective-mass Schrodinger equation for interacting few-electron systems confined in a single ultrasmall device. The band structures for noninteracting electrons in device arrays have been studied by performing augmented plane wave calculations for two-dimensional arrays of two-dimensional circular quantum wells and quantum barriers. Results are presented and the impact on the understanding of the electronic structure of devices and arrays is discussed.