Abstract
The electronic structure of valence and conduction bands of silicon nitride SiN x layer deposited on a silicon substrate was studied using X-ray photoelectron spectroscopy (XPS) and X-ray bremsstrahlung isochromat spectroscopy (BIS), respectively, and compared with the density of states (DOS) taken from the literature. In the isochromat spectrum measured at photon energy 5415 eV, a strong maximum at 9.7 eV and a weak extended structure in the energy range up to 200 eV above the BIS edge were observed. A theoretical calculation of extended X-ray bremsstrahlung isochromat fine structure (EXBIFS) for silicon nitride has been performed using a multiple scattering method and partial probabilities of X-ray bremsstrahlung transitions calculated for continuum states in a dipole approximation. The results have shown that the X-ray bremsstrahlung isochromat fine structure for silicon nitride appears mainly due to electron transitions to the s states localized near Si ions.
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