Abstract
The electronic structure of rare earth bismuthides—Gd4Bi3, Tb4Bi3 andR5Bi3(R = Gd,Tb, Dy, Ho, Er)—has been investigated with use of x-ray and ultraviolet photoelectronspectroscopies and calculated with the tight-binding linear muffin-tin orbitalmethod. The spectra simulated on the basis of ab initio results reproduce correctlythe experimental ones. This enabled analysis of the character of the electronicstates, their hybridization and influence on magnetic properties. The temperaturedependence of the valence band photoemission of ferromagnetic Gd4Bi3 andTb4Bi3has been studied and compared to the results obtained with the spin-polarized,non-polarized and open core methods of calculation.
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