Abstract
Electronic structures of InAs/GaAs cubic and truncated pyramidal quantum dots grown in (111) direction are showed in this paper. Continuum elastic theory is used to determine the strain distributions. Electronic energy levels are calculated by solving a three-dimensional effective mass Shrodinger equation including a strain modified confinement potential and piezoelectric effects. The influence of polarization effect to conduction band of quantum dot is discussed. It is found that polarization distribution is dependent on the shape of quantum dot.
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