Abstract
Investigations were carried out on the optical absorption and photoconductivity of plasma-deposited hydrogenated amorphous Si-C (a-Si x C 1 − x :H) films from methylsilanes with different numbers of methyl groups. It was found that two groups of these films were obtained with different electronic structures. The films obtained from methylsilanes with a low content of silicon ([Si]/([C] + [Si]) ⩽ 0.33) are typical dielectrics, while the films formed from methylsilanes with [Si]/([C] + [Si]) ⩾ 0.5 may be categorized as amorphous semiconductors.
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