Electronic structure of partially hydrogenated Si(100)-( 2 x 1) surfaces prepared by thermal and nonthermal desorption.

Abstract

The electronic structure of partially hydrogenated Si(100)- (2 x 1) surfaces, prepared by controlled thermal annealing and nonthermal photon stimulated desorption of fully hydrogenated Si(100) surfaces, has been investigated by using valence band photoemission. Thermal and nonthermal desorption are found to produce very specific electronic surface structures. This led us to the discovery of two specific surface states having binding energies of 1.0 and 0.7 eV associated with the isolated Si dimers and single Si dangling bonds, respectively.