Abstract
A group of bismuth vanadium oxides shows promise as an excellent material for photoanodes in water splitting. However, the efficiency of Bi4V2O11 in water splitting is not satisfactory compared to BiVO4. In this study, we investigated the electronic structure of orthorhombic Bi4V2O11 using density functional theory (DFT) and synchrotron soft X-ray spectroscopy techniques to clarify the causes of inefficiency. Our DFT calculations of the two-fold superlattice, as confirmed by near-edge X-ray absorption fine structure measurements, revealed its indirect-band-gap nature. An angle-resolved photoelectron spectroscopy study identified the states within the band gap, and the resonant photoemission technique and DFT simulation clarified that the origin of the gap states was anisotropic localization of electrons around V–O tetrahedra. Water absorption enhances the gap states, which dramatically impedes the kinetics of water oxidation reactions. Our results reveal the role of gap states in water oxidation reactions and offer new insights into manipulating gap states in 3d transition metal oxides.
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