Abstract
ABSTRACTFirst-principles density functional calculations are performed to investigate the electronic properties of O-vacancy defects in high-kHfO2, Si/HfO2interface, and amorphous oxide semiconductors. The role of O-vacancy in device performance is discussed by comparing the results of the GGA, hybrid density functional, and quasiparticle energy calculations.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
