Abstract
We report a theoretical study of the electronic structure of GaAs nanowhiskers, grown in the [111] direction with hexagonal cross section, based on a tight binding approach. It is shown that the band structure of the GaAs nanowhiskers shifts from a direct band gap to an indirect band gap when the lateral size of the nanowhiskers becomes smaller than a certain value. The effective masses of the electrons and holes are shown to increase with decreasing the nanowhisker lateral size. It is also shown that the light-hole states appear to be at the top of the valence bands. The electrical and optical properties of the nanowhiskers are discussed in terms of the results of the calculations.
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