Abstract

We have performed systematic high-resolution angle-resolved photoemissionspectroscopy (ARPES) on layered transition-metal dichalcogenidesNb1−xTixXc2 (Xc = S, Se, Te) to study the mechanism of metal–semiconductor transition as a function ofx and Xc. We founda pseudogap near EF in the S- and Se-based compounds while a clear Fermi edge is observed in the Te-basedcompound. The existence of the pseudogap indicates the strong scattering of electrons by therandom potential caused by substitution, which prevents formation of the charge densitywave and at the same time decreases the metallic conductivity. The metallic character ofNb1−xTixTe2 is explained in terms of the relatively strong Te 5p–Nb 4d (Ti 3d) hybridization nearEF.

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