Abstract
The electronic structure of InAs quantum dots (QDs) embedded in GaAs was studied with transport and luminescence spectroscopy. From the differential capacitance the Coulomb blockade energy for electrons and holes in the QD ground state, the energy splitting between the ground and first excited state in the conduction band system and the energetic distance of the electron ground state from the GaAs conduction band edge was extracted. The differential conductance in combination with the related electroluminescence signal gives insight into the energetic situation of the valence band system and the selection rules dominating the optical properties of InAs QDs.
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