Abstract
The H:GaP(110) system was studied by EELS and AES. H induced losses were found in the 8, 12 and 18 eV region respectively. The PL2.3 Auger lineshape was recorded as a function of emitted electron take-off angle. This method was proven to be able to identify structures in the electronic density of states at the surface both in the clean and H exposed surface. Two H induced states. located at about 2 and 4.5 eV below the valence band respectively, have been singled out.
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