Abstract
The ability to explore electronic structure and their role in determining material’s macroscopic behaviour is essential to explain and engineer functions of material and device. Graphene/hexagonal boron nitride heterostructure (G/h-BN) has become a model system to study the emergent behaviour in 2D van der Waals heterostructure. Here by employing angle-resolved photoemission spectroscopy with spatial resolution ∼ 100 nm (Nano-ARPES), we give a full description on the electronic structure of G/h-BN, demonstrating the power of Nano-ARPES to detect the microscopic inhomogeneity of electronic structure for different materials.
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