Abstract
The electronic ground-state properties of Fe/semiconductor/Fe(001) tunnel junctions are studied by means of the ab initio screened Korringa-Kohn-Rostoker method. We focus on the magnetic properties, charge transfer, local, and ${\mathbf{q}}_{\ensuremath{\Vert}}$-resolved density of states of these systems. We consider in detail Fe/ZnSe/Fe(001) tunnel junctions and compare their electronic properties with junctions with Si and GaAs barriers. We discuss the results in connection to the spin-dependent transport properties expected for these systems.
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