Electronic structure of Fe overlayers on Si(1 1 1)

Abstract

The electronic band structure of Fe overlayers on Si(1 1 1) has been studied by angle resolved photoemission with synchrotron radiation. Formation and evaluation of the interface region have been followed for incremental Fe coverages between 4 Å and 50 Å. The results indicate that films grown on room temperature substrates form an antiferromagnetic buffer layer and silicide formation followed by a pure Fe films (30 Å), while films grown at elevated temperatures (200°C or higher) retain the Fe silicide structure. These results provide information as to the suitability of Fe overlayer on Si(1 1 1) for subsequent magnetic overlayer and heterostructures.