Abstract
The electronic structure of pulsed laser-depositedMo1−xFexO2 (x = 0,0.02 and 0.05) thin films has been investigated using resonant photoemission spectroscopynear the Mo 4p absorption edge. In all the samples a broad Fano-like resonance peak at∼46 eV is observed in the whole area of the valence band, which indicates the contribution ofthe Mo 4d states in the entire valence band region. The doping of Fe in these films leads toa decrease in Mo 4d states contributing to electronic states at lower binding energy region.In addition to this, we also observe a shoulder at 4.9 eV in the valence band spectra ofdoped samples. It is proposed that the origin of this shoulder is due to the Fe hybridizedstates.
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