Abstract
Abstract A study of the electronic structure of simple defects such as vacancies, interstitials and antisites and of their complexes in amorphous GaAs (a-GaAs) has been made using a cluster Bethe lattice formalism. In particular, the local density of electronic states for the various proposed atomic models for the much studied EL2 defect observed in crystalline GaAs are presented for the a-GaAs matrix. The calculated peaks for the various defects are in close agreement with the experimental data wherever available. The results may be useful for future interpretation of electronic states detected in experiments performed on a-GaAs.
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