Electronic structure of cubic boron arsenide probed by scanning tunneling spectroscopy

Abstract

The unusually high lattice thermal conductivity of semiconducting cubic boron arsenide (BAs) has motivated studies of the bulk electronic band structure of BAs for its potential use as an active layer material in electronic devices. However, the surface electronic structure of BAs remains to be investigated. Scanning tunneling spectroscopy (STS) is employed here to probe the electronic structure of as-grown and in situ cleaved surfaces of BAs single crystals. The bandgap measured at several interior locations of the cleaved surface is about 2.1 eV, close to our calculated bulk bandgap value of 2.05 eV. In comparison, the measured bandgap within several micrometers from the two edges of the cleaved surface decreases to about 1.9 eV. This decrease is attributed to tunneling from an increased concentration of shallow acceptors. Several of the tunneling peaks observed by STS within the bandgap are close to the calculated energy levels for bulk lattice defects and substitutional impurities. In contrast to some other III–V compound semiconductors where surface relaxation prevents intrinsic surface states from appearing in the bulk bandgap, some measured tunneling peaks in the BAs bulk bandgap can contain contributions from intrinsic surface states calculated for boron dangling bonds.