Year-end Sale % OFF 
Abstract
Electronic structure of bulk and oxygen vacancies of high-k dielectric Al 2O 3 (α- and γ- phases) was calculated from the first principles. It was found, that oxygen vacancy can be both electron and hole trap in α- and γ-Al 2O 3. High leakage current trough thin films of Al 2O 3 can be caused by oxygen vacancies.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
