Electronic structure of bismuth molybdenum oxide single crystal Bi 0.19 MoO 3

Abstract

Single crystal Bi0.19MoO3 has been grown by the fused salt electrolytic technique. X-ray powder diffraction shows that the unit cell parameters are: a=1.9985nm, b=0.4085nm and c=1.4437nm. The temperature dependence of resistivity demonstrates a semiconductor characteristic. X-ray photoemission spectroscopy studies show that the valence bands of Bi0.19MoO3 are made up of oxygen p? and the ?*, ? and ? bonding bands formed by orbital combination. The shoulder at 0.4eV near the top of the valence band may be formed from the non-bonding dxy orbitals of some Mo atoms. The O1s core-electron spectrum reveals the presence of two inequivalent bonds of oxygen ions in Bi0.19MoO3. The Bi4f core-level spectrum shows two bonding characters of Bi atoms in bismuth molybdenum oxide single crystals. The Mo3d core-level spectrum could be decomposed into two types of valence states of molybdenum(Mo+5 and Mo+6).