Abstract
The tight binding method is used to describe the electronic densities of states for three different structural models of a-GeS: a hypothetical crystal, corresponding Bethe lattice, and a random network. The close similarity of the results, explained on chemical and structural grounds, legitimates the Bethe lattice approximation for germanium chalcogenides.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.