Abstract
High resolution soft x-ray emission spectroscopy with high spatial resolution is used to study of the electronic structure and characterize advanced materials: high-Tc superconductors, transition metal compounds, porous silicon, solid-solid buried interfaces and hard materials. In high-Tc, the main attention is focused on the analysis of oxygen-cation interactions and the determination of the location of impurity atoms. In transition metal compounds the participation of different electronic states of constitute atoms in the valence band is analyzed and correctness of LDA band structure calculations is estimated. For CuFeO2 an unusual mutual position of the Cu3d and Fe3d bands was found which is attributed to strong electron-electron correlations. In porous silicon the local structure of silicon atoms is found to depend on the type of doping of the initial Si wafer. Solid-solid buried interfaces in thin semiconducting films irradiated by eximer laser are investigated. For the hard materials boron-carbonitr...
Published Version
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