Abstract
We have theoretically studied the electronic structure of a (311)-oriented InAs monolayer embedded in GaAs by using the semi-empirical sp3s*tight-binding method; (InAs)1/(GaAs)n[311] superlattices withn=10∼26 are used for the calculations. The (311)-InAs monolayer induces an electron level (near the conduction-band edge) and a hole level (near the valence-band edge) in the GaAs band gap. The electron–hole energy separation is smaller than the GaAs band-gap energy by 0.06 eV (n=10) and 0.03 eV (n=26). The charge densities of the electron state and the hole state are weakly localized near the (311)-InAs monolayer.
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