Electronic structure and simulation of the dielectric function of β-FeSi2 epitaxial films on Si(111)

Abstract

The optical functions of iron disilicide (β-FeSi2) thin epitaxial films are calculated from the reflectance spectra in the energy range 0.1–6.2 eV with the use of the Kramers-Kronig (KK) integral relations. A comparison of the results of calculations from the transmittance and reflectance spectra and the data obtained from the reflectance spectra in terms of the Kramers-Kronig relations indicates that the fundamental transition at an energy of 0.87±0.01 eV is a direct transition. An empirical model is proposed for the dielectric function of β-FeSi2 epitaxial films. Within this model, the specific features in the electronic energy-band structure of the epitaxial films are described in an analytical form. It is shown that the maximum contributions to the dielectric function and the reflectance spectrum in the energy range 0.9–1.2 eV are made by the 2DM0-type second harmonic oscillator with an energy of 0.977 eV. This oscillator correlates with the second direct interband transition observed in the energy-band structure of β-FeSi2.