Electronic structure and resonant inelastic x-ray scattering in GaTa4Se8

Abstract

We have investigated the electronic structure of the lacunar spinel compound GaTa4Se8 within the density-functional theory (DFT) using the generalized gradient approximation while taking into account strong Coulomb correlations (GGA+U) in the framework of the fully relativistic spin-polarized Dirac linear muffin-tin orbital band-structure method. GaTa4Se8 can be classified as a Mott insulator since it was expected to be metallic from GGA band structure calculations in contradiction with the resistivity and optical measurements. Strong SOC splits the t2g-type manifold into a lower jeff = 3/2 quartet and an upper jeff = 1/2 doublet. The empty jeff = 1/2 band is well separated from the jeff = 3/2 one and almost completely given by linear combinations of d5/2 states. The partly filled jeff = 3/2 band is dominated by d3/2 states with some weight of d5/2 ones and consists of two groups of bands separated by an energy gap. The low energy jeff = 3/2 band situated at the Fermi level is very narrow, therefore even a small Hubbard U opens the energy gap. We have investigated theoretically the resonant inelastic x-ray scattering (RIXS) spectra at the Ta L2,3 edges. The calculated results are in good agreement with experimental data. We have found that the best agreement between the theory and experiment in the value of the Hubbard energy gap and RIXS spectra at the Ta L2,3 edges can be achieved for Ueff = 1.0 eV. The experimentally measured RIXS spectrum of GaTa4Se8 at the Ta L3 edge in addition to the elastic scattering peak at 0 eV possesses a sharp feature below 1 eV corresponding to transitions within the Ta t2g levels. The excitation located from 1 eV to 2 eV is due to t2g→eg transitions. The third wide very intensive structure from 2.8 eV up to 12 eV is almost completely derived from ligand-to-ligand charge transfer excitations. Such a situation is quite unique for the RIXS spectra in transition 5d metal systems. The origin of this dominant contribution as well as the electronic correlation in GaTa4Se8 is a consequence of its peculiar crystal structure which forms tetrahedral Ta4 clusters with very small intracluster Ta–Ta and Ta–Se distances and rather large distances between the Ta4 clusters. It results in the formation of localized electronic states and extremely strong Ta 5d - Se 4p hybridization which creates 5dSe states with high density of states. Such hybridization is much stronger in comparison with the corresponding 5d - O 2p hybridization in 5d transition metal oxides due to more extended Se 4p wave functions in comparison with oxygen 2p ones.