Abstract
We have investigated the compositional dependence of the electronic structure and optical properties of Si 1− x Ge x semiconductor alloys with composition x ranging from 0 to 1 by means of two computational methods: the linear-muffin-tin-orbital method with the atomic-sphere approximation and the empirical pseudopotential method within the virtual crystal approximation. To make allowance for the compositional disorder effect, this latter has been included as an effective potential. Moreover, the effect of the deviation from Vegard's law on the opto-electronic properties has been discussed. A comparison between the results obtained from the two used methods with respect to available experimental data has been made.
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