Abstract
The electronic structure of Gd 5Si 4, Gd 5Si 2Ge 2 and Gd 5Ge 4 was investigated with X-ray photoelectron spectroscopy (XPS) and compared to the results of magnetic susceptibility and electrical resistivity measurements. High-temperature magnetic susceptibility exhibits anomalies for all the compounds. Various magnetic transitions, present in the compounds, manifest in the electrical resistivity in different ways. The details of the electronic structure, obtained from the XPS measurements, are discussed with respect to the GdSi, GdGe bonding, and charge transfer.
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