Abstract
The recent development of time-resolved X-ray absorption spectroscopy (TR-XAS) has opened avenues for fundamental research on doped semiconductors. Reported herein are results on the successful doping of indium phosphide nanocrystals (NCs) with copper and subsequent characterization with time-resolved X-ray studies and large-scale density functional theory (DFT) calculations. The synthetic protocol that was based on the cluster seed method afforded control of both the doping level and the quantity of NCs produced in a batch. The stability of the colloidal dispersion allowed us to monitor the photophysical properties of copper guest ions with static and TR-XAS at the copper K-edge. These data reveal that copper captures a hole from the photoexcited InP NC, and relaxation to the ground state occurs via multiple timescales likely due to the presence of interior and surface-bound dopant ions as well as recombination with surface- and defect-trapped electrons. Large-scale DFT calculations reveal a striking dep...
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
