Electronic stopping powers for fluorine ions in 19F +-implanted silver gallium diselenide

Abstract

Electronic stopping powers for 80–350 keV 19F ions in AgGaSe 2 were obtained by range measurement. Depth profiles of 19F in AgGaSe 2 were measured by using the 19F(p,αγ) 16O resonant nuclear reaction at E R=872.1 keV. A proper convolution calculation method was used to extract the true distribution of fluorine from the experimental excitation yield curves. The electronic stopping powers were derived through fitting the projected range distributions, simulated by using the TRIM/XLL code, to the experimentally measured range distributions. The electronic stopping cross-sections were compared with those obtained from Monte Carlo simulation codes.