Abstract
Theoretical calculations of electronic subbands in two-dimensional semiconductor systems have been performed in Si metal-oxide-semiconductor (MOS) structures [9.1] and later in III–V heterostructures. In the latter case, the tight-binding method [9.2–4], the pseudopotential method [9.5,6] or ab initio schemes based on the density functional formalism [9.7] were exploited, in addition to the envelope- function or effective-mass method.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
