Electronic states associated with dislocations in p-type silicon studied by means of electric-dipole spin resonance and deep-level transient spectroscopy.

Abstract

Dislocation loops consisting of long and straight segments of 60\ifmmode^\circ\else\textdegree\fi{} and screw parts were introduced in p-type Si by deformation under a high stress at a relatively low temperature. Electronic states associated with such dislocations were investigated by means of electric-dipole spin resonance, with and without photoexcitation, and deep-level transient spectroscopy. The effect of relaxation in the shape of dislocations due to annealing was also investigated. All of the experimental results were interpreted consistently with the model that the straight part of the dislocation accompanies rather shallow one-dimensional energy bands which were split off from the valence and conduction bands of the Si matrix crystal and that point defects having rather deep electronic levels were located discretely along dislocations.