Abstract
Binding energy, interband emission energy and the non-linear optical properties of exciton in an InSb/InGa x Sb 1− x quantum dot are computed as functions of dot radius and the Ga content. Optical properties are obtained using the compact density matrix approach. The dependence of non-linear optical processes on the dot sizes is investigated for different Ga concentrations. The linear, third order non-linear optical absorption coefficients, susceptibility values and the refractive index changes of the exciton are calculated for different concentrations of gallium content. It is found that gallium concentration has great influence on the optical properties of InSb/InGa x Sb 1− x dots.
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