Abstract
All electron ab initio Hartree-Fock (HF), configuration interaction (CI) and multiconfiguration self-consistent field (CASSCF) calculations have been applied to investigate the low-lying electronic states of the NiSi molecule. The ground state of the NiSi molecule is predicted to be1Σ+. The chemical bond in the1Σ+ ground state is a double bond composed of one σ and one π bond. The σ bond is due to a delocalized molecular orbital formed by combining the Ni 4s and the Si 3pσ orbitals. The π bond is a partly delocalized valence bond, originating from the coupling of the 3dπ hole on Ni with the 3pπ electron on Si. Withing the energy range 1 eV 18 electronic states have been identified. The lowest lying electronic states have been characterized as having a hole in either the 3dπ or the 3dδ orbital of Ni, and the respective final states are formed when either of these holes are coupled to the 3pπ valence electron of Si.
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