Electronic states and interband transitions of strained In z Ga x Al1−z−x P/In0.5Al0.5P multiple quantum wells

Abstract

Strained InGaAlP/In0.5Al0.5P multiple quantum wells (MQWs) with digital alloy wells made of alternating 3-monolayer In0.5Ga0.5P and 2-monolayer In0.5Al0.5P layers were grown by using molecular-beam epitaxy. The electronic subband energy states and the interband transition energies of the InGaAlP/InAlP MQWs were calculated by using the finite element method to solve the Schrodinger equation in an 8-band envelope function approximation including the strain effects. The calculated interband transitions of the InGaAlP/InAlP MQWs were in reasonable agreement with the excitonic transitions obtained from the photoluminescence spectra.