Electronic state studies of the clean Si(111)7 × 7 and the hydrogen chemisorbed Si(111) surface by total current spectroscopy

Abstract

Experimental results have been obtained on the clean Si(111)7 × 7 surface and the hydrogen chemisorbed Si(111) surface by using total current spectroscopy (TCS). Four occupied surface states at 0.5, −0.2, −0.9 (or −1.45) and −5.5 eV relative to the valence band maximum (VBM) are observed on the Si(111)7 × 7 surface. An induced surface state at −5.7 eV below the VBM has also been observed on the hydrogen saturated chemisorbed surface.