Abstract
Amorphous indium gallium zinc oxide (a-IGZO) films were fabricated using dc magnetron sputtering with water vapor (H2O or D2O) introduction. To determine the incorporation pattern of water, films were characterized by secondary ion mass, Fourier transform infrared, Raman, and hard X-ray photoelectron spectroscopies. Chemically bound hydroxyl groups were observed, and more hydroxyl bonds existed nearer to the interface between the substrate and film than in the film. Furthermore, for a-IGZO films, subgap densities of states near valence band maxima increased with the H2O partial pressure during deposition, which can be attributed to defect-level generations due to H and O.
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