Abstract
Electronic state of the 2D Hubbard model near the half-filling is analyzed by use of the composite operator method. Doping and temperature dependence of density of states show similar behaviors obtained in numerical simulation. The weight of the upper and lower Hubbard bands at the half filling are not evenly distributed in the Brillouin zone, keeping roughly the original band distribution. With hole doping the lower Hubbard band spreads in the whole zone.
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