Abstract
The dispersed fluorescence following pulsed dye laser excitation of the B2Σ+-X2Σ+ (0,0) band of a cold sample of SiO+ has been recorded and analyzed. The branching ratios for B2Σ+ (v=0)→X2Σ+ (v) and B2Σ+ (v=0)→A2Πi(v) emission were determined and compared with values predicted based upon existing experimental and theoretical data. The experimentally determined branching ratios show that the B2Σ+ (v=0)→X2Σ+ (v) transitions are somewhat less diagonal than predicted. The implications for laser cooling of a trapped sample of SiO+ using broadband laser excitation are discussed.
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