Abstract
We investigated the electronic scattering properties of a local bump strain in graphene sheet in frame of Born approximation. The differential scattering cross section is a function of outgoing and incident angles and has the six-fold rotational symmetry with respect to both angles. The incident plane wave is scattered into two backward fan-waves in different directions in low energy limit and is split into two branches spanning the angle reversely proportional to the incident wavevector k in high energy limit. The total scattering cross section depends on incident wavevector by the form k5 in the former limit, while it is independent of k and sensitive to the incident orientation in the latter limit. We explained these features using the symmetry of the strain-induced pseudo-magnetic field.
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