Abstract
Electronic Raman scattering is used to study shallow acceptors in Zn-doped and Cd-doped p-type semiconducting InP in the temperature range between 10K and 160K. Well-resolved spectra for the Zn-doped samples are obtained. The transition energies are compared with photoluminescence results from the literature and show a satisfying agreement. The acceptor concentrations of the samples investigated range between 2 · 10 16cm −3 and 9 · 10 17cm −3. A linear correlation between the normalized intensity of the electronic spectrum and the acceptor concentration is found.
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